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2SC2351 Scheda tecnica(PDF) 2 Page - NEC

Il numero della parte 2SC2351
Spiegazioni elettronici  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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Produttore elettronici  NEC [NEC]
Homepage  http://www.nec.com/
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2SC2351 Scheda tecnica(HTML) 2 Page - NEC

  2SC2351 Datasheet HTML 1Page - NEC 2SC2351 Datasheet HTML 2Page - NEC 2SC2351 Datasheet HTML 3Page - NEC 2SC2351 Datasheet HTML 4Page - NEC  
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2SC2351
TYPICAL CHARACTERISTICS (TA = 25
°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC-Collector Current-mA
12
5
10
20
50 70
0.5
10
20
30
50
100
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
IC-Collector Current-mA
12
5
10
20
50 70
0.5
0.1
0.2
0.5
1
2
5
7
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
VCB-Collector to Base Voltage-V
0.5
1
2
5
10
20
30
0
0.3
0.5
1
2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE-Base to Emitter Voltage-V
0.6
0.7
0.8
0.9
0.5
0.5
1
2
5
10
20
50
70
INSERTION GAIN vs.
COLLECTOR CURRENT
IC-Collector Current-mA
12
5
10
20
50 70
0.5
0
5
10
15
VCE = 10 V
VCE = 10 V
f = 1.0 MHz
NOISE FIGURE.
COLLECTOR CURRENT
IC-Collector Current-mA
12
5
10
20
50 70
0.5
0
1
2
3
4
5
7
6
VCE = 10 V
VCE = 10 V
f = 1.0 GHz
VCE = 10 V
f = 1.0 GHz


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