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2SC2460 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC2460 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2460 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 140 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V VBE Base-emitter on voltage IC=6A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=140V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 55 240 hFE-2 DC current gain IC=6A ; VCE=-5V 35 fT Transition frequency IC=1A ; VCE=10V 70 MHz |
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