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IRF830S Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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IRF830S Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91064 2 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830S, SiHF830S Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -40 Maximum Junction-to-Case (Drain) RthJC -1.7 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.7 Ab -- 1.5 Forward Transconductance gfs VDS = 50 V, ID = 2.7 Ab 2.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 610 - pF Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss -68 - Total Gate Charge Qg VGS = 10 V ID = 3.1 A, VDS = 400 V, see fig. 6 and 13b -- 38 nC Gate-Source Charge Qgs -- 5.0 Gate-Drain Charge Qgd -- 22 Turn-On Delay Time td(on) VDD = 250 V, ID = 3.1 A, Rg = 12 , RD = 79 , see fig. 10b -8.2 - ns Rise Time tr -16 - Turn-Off Delay Time td(off) -42 - Fall Time tf -16 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 4.5 A Pulsed Diode Forward Currenta ISM -- 18 Body Diode Voltage VSD TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb - 320 640 ns Body Diode Reverse Recovery Charge Qrr -1.0 2.0 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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