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2SD1207 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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2SD1207 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 5 page 2SB892 / 2SD1207 Rev.0 I Page 1 of 5 I www.onsemi.com Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Specifications ( ) : 2SB892 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)2 A Collector Current (Pulse) ICP (--)4 A Collector Dissipation PC 1W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)0.1 µA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 µA Continued on next page. 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar SiliconTransistors Large-Current Switching Applications Ordering number : EN930D © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: 2SB892_2SD1207/D |
Codice articolo simile - 2SD1207 |
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