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FM25C160B-GA Scheda tecnica(PDF) 11 Page - Cypress Semiconductor

Il numero della parte FM25C160B-GA
Spiegazioni elettronici  16-Kbit (2 K 횞 8) Serial (SPI) Automotive F-RAM
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Produttore elettronici  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25C160B-GA Scheda tecnica(HTML) 11 Page - Cypress Semiconductor

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FM25C160B
Document Number: 001-86150 Rev. *A
Page 11 of 20
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55
C to +125 C
Maximum junction temperature ................................. 135
C
Supply voltage on VDD relative to VSS .........–1.0 V to +7.0 V
Input voltage ............. –1.0 V to +7.0 V and VIN < VDD+1.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ......................................... +260
C
DC output current (1 output at a time, 1s duration) .... 15 mA
Electrostatic Discharge Voltage
Human Body Model (AEC-Q100-002 Rev. E) ................... 4 kV
Charged Device Model (AEC-Q100-011 Rev. B) ........... 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) .......................... 300 V
Latch up current ..................................................... > 140 mA
Operating Range
Range
Ambient Temperature (TA)
VDD
Automotive-E
–40
C to +125 C
4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ [5]
Max
Unit
VDD
Power supply
4.5
5.0
5.5
V
IDD
VDD supply current
SCK
toggling
between
VDD – 0.3 V and VSS, other
inputs VSS or VDD – 0.3 V.
SO = Open.
fSCK = 1 MHz
0.3
mA
fSCK = 15 MHz
––3
mA
ISB
VDD standby current
CS = VDD. All other inputs
VSS or VDD.
TA = 85 °C
10
A
TA = 125 °C
30
A
ILI
Input leakage current
VSS < VIN < VDD
––
±1
A
ILO
Output leakage current
VSS < VOUT < VDD
––
±1
A
VIH
Input HIGH voltage
0.75 × VDD
–VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
0.25 × VDD
V
VOH
Output HIGH voltage
IOH = –2 mA
VDD – 0.8
V
VOL
Output LOW voltage
IOL = 2 mA
0.4
V
VHYS
[5]
Input Hysteresis (CS and SCK pin)
0.05 × VDD
––
V
Notes
3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
4. This parameter is characterized but not 100% tested.


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