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BYG22D Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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BYG22D Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BYG22A thru BYG22D www.vishay.com Vishay General Semiconductor Revision: 21-Dec-11 1 Document Number: 88959 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V to 200 V IFSM 35 A IR 1.0 μA VF 1.1 V trr 25 ns ER 20 mJ TJ max. 150 °C DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG22A BYG22B BYG22D UNIT Device marking code BYG22A BYG22B BYG22D Maximum repetitive peak reverse voltage VRRM 50 100 200 V Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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Descrizione simile - BYG22D |
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