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PZTA94G-AA3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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PZTA94G-AA3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 3 page PZTA94 Preliminary PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R207-026.a ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Collector Power Dissipation(TA=25°C) PD 625 mW Collector Current IC -300 mA Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -400 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -400 V Collector-Emitter Breakdown Voltage BVCES IC=-100μA, VBE=0 -400 V Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-300V, IE=0 -100 nA Collector Cut-off Current ICES VCE =-400V, VBE=0 -1 μA Emitter Cut-off Current IEBO VEB=-4V, IC=0 100 nA DC Current Gain(note) hFE VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA 60 70 70 40 300 Collector-Emitter Saturation Voltage VCE(SAT) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA -0.20 -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA, IB=-1mA -0.75 V Output Capacitance Cob VCB=-20V, IE=0, f=1MHz 7 pF Note: Pulse test: Pulse Width<300μs, Duty Cycle<2% |
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