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IRF260 Scheda tecnica(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF260 Scheda tecnica(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS www.nellsemi.com Page 4 of 7 IRF260 Series Fig.5 Typical capacitance vs. Drain-to-Source voltage Fig.6 Typical source-drain diode forward voltage 0 2.5 0.5 1.0 0 10 1 10 2000 4000 8000 6000 10000 C = ( ) iss C +C C shorted gs gd ds C = C +C oss ds gd C = C rss gd V = 0V, f = 1MHz GS Drain- voltage, V (V) SD Source 1.5 2.0 Source- voltage, V (V) SD Drain 1 10 2 10 Fig.7 Typical gate charge vs. gate-to-source voltage Fig.8 Maximum safe operating area Fig.9 Maximum drain current vs. Case temperature 16 12 8 4 0 0 40 80 120 160 200 10 100 1 2 10 3 10 50 40 30 20 10 0 25 50 75 100 125 150 Case temperature, T (°C) C V = 160V DS V = 40V DS V = 100V DS 20 Total gate charge, Q (nC) G 10 1 1000 Drain-source voltage, V (V) DS Ciss Coss Crss 12000 25ºC 150ºC V = 0V GS I = 50 A D 240 Operation in This Area is Limited by RDS(ON) Note: 1. T 2. T = 25°C C = 150°C J 3. Single Pulse 10µs 100µs 1ms 10ms |
Codice articolo simile - IRF260 |
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Descrizione simile - IRF260 |
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