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2SD1985 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1985 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1985 2SD1985A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1985 60 VCEO Collector-emitter breakdown voltage 2SD1985A IC=30mA , IB=0 80 V VCEsat Collector-emitter saturation voltage IC=3A;IB=0.375A 1.2 V VBE Base-emitter voltage VCE=4V;IC=3A 1.8 V 2SD1985 VCE=60V;IB=0 ICES Collector cut-off current 2SD1985A VCE=80V;IB=0 200 µA 2SD1985 VCE=30V;IB=0 ICEO Collector cut-off current 2SD1985A VCE=60V;IB=0 300 µA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=4V 70 250 hFE-2 DC current gain IC=3A ; VCE=4V 10 fT Transition frequency IC=0.5A; VCE=5V;f=10MHz 30 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 2.5 µs tf Fall time IC=1A ;IB1=0.1A IB2=-0.1A;VCC=50V 0.4 µs hFE-1 Classifications Q P 70-150 120-250 |
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