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BTB9435L3 Scheda tecnica(PDF) 1 Page - Cystech Electonics Corp. |
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BTB9435L3 Scheda tecnica(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C809L3 Issued Date : 2009.01.16 Revised Date: Page:1/7 BTB9435L3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB9435L3 Features • Low VCE(sat) • Excellent current gain characteristics • RoHS compliant package Symbol Outline SOT-223 E C B C BTB9435L3 E:Emitter C:Collector B:Base Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V IC(DC) -3 A Collector Current IC(pulse) -5 (Note 1) A Pd(Ta=25 ) ℃ 1.56 (Note 2) Power Dissipation Pd(Tc=25 ) ℃ 3 W Thermal Resistance, junction to ambient RθJA 80 Thermal Resistance, junction to case RθJC 42 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse Pw 3 ≦ 00μs,Duty 2% ≦ . 2. When the collector of device is mounted on a FR-4 board with area of 1” sq(645 sq mm) |
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