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2SC4467 Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte 2SC4467
Spiegazioni elettronici  SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4467 Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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2SC4467
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R214-018.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
8
A
Base Current
IB
3
A
Collector Power Dissipation (TC=25°C)
PC
80
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Cut-Off Current
ICBO
VCB=160V
10
µA
Emitter Cut-Off Current
IEBO
VEB=6V
10
µA
Collector-Emitter Breakdown Voltage
BVCEO
IC=50mA
120
V
DC Current Gain
hFE
VCE=4V, IC=3A
50
Collector-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=0.3A
1.5
V
Current Gain Bandwidth Product
fT
VCE=12V, IE=-0.5A
20
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
200
pF
Switching time
Turn-on time
tON
VCC=40V, RL=10Ω, IC=4A,
IB1=0.4A IB2=0.4A
0.13
µS
Storage time
tS
3.50
µS
Fall time
tF
0.32
µS
CLASSIFICATION OF hFE
RANK
O
P
Y
RANGE
50~100
70~140
90~180


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