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2N1773A Scheda tecnica(PDF) 1 Page - Digitron Semiconductors

Il numero della parte 2N1773A
Spiegazioni elettronici  PHASE CONTROL SCR
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Produttore elettronici  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N1773A Scheda tecnica(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N1770A-2N1777A, 2N2619A
PHASE CONTROL SCR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Symbol
2N1770A
2N1771A
2N1772A
2N1773A
2N1774A
Units
Repetitive peak off-state voltage
VDRM
25
50
100
150
200
Volts
Repetitive peak reverse voltage
VRRM
25
50
100
150
200
Volts
Non-repetitive peak reverse voltage
VRSM
35
75
150
225
300
Volts
Ratings
Symbol
2N1775A
2N1776A
2N1777A
2N2619A
Units
Repetitive peak off-state voltage
VDRM
250
300
400
600
Volts
Repetitive peak reverse voltage
VRRM
250
300
400
600
Volts
Non-repetitive peak reverse voltage
VRSM
350
400
500
720
Volts
Ratings
Symbol
2N1770A-2N1777A, 2N2619A
Units
RMS on-state current
IT(RMS)
7.4
Amps
Average on-state current (nominal) TC = 105°C
IT(AV)
4.7
Amps
Peak one-cycle surge (non-repetitive) on-state current (60 Hz)
ITSM
60
Amps
I2t (for fusing), 8.3ms
I2t
15
A2sec
Critical rate of rise of on-state current (repetitive)
di/dt
60
A/µs
Peak gate power dissipation
PGM
5
Watts
Average gate power dissipation
PG(AV)
0.5
Watts
Peak forward gate current
IFGM
2
Amps
Peak reverse gate voltage
VRGM
10
Volts
Storage temperature
Tstg
-65 to +150
°C
Operating temperature
TJ
-65 to +150
°C
Mounting torque
-
15
In.- lbs.
Mounting torque
-
17.5
kg-cm
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Test Conditions
2N1770A
2N1771A
2N1772A
2N1773A
2N1774A
Units
Voltage-Blocking state maximum
Forward leakage, peak
IDRM
TJ = 150°C, VD = VDRM
9.0
9.0
9.0
8.0
6.0
mA
Reverse leakage, peak
IRRM
TJ = 150°C, VR = VRRM
9.0
9.0
9.0
8.0
6.0
mA
Characteristics
Symbol
Test Conditions
2N1775A
2N1776A
2N1777A
2N2619A
Units
Voltage-Blocking state maximum
Forward leakage, peak
IDRM
TJ = 150°C, VD =
VDRM
5.0
4.0
2.0
2.0
mA
Reverse leakage, peak
IRRM
TJ = 150°C, VR =
VRRM
5.0
4.0
2.0
2.0
mA
2N1770A-2N1777A, 2N2619A
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Units
Current- Conducting state
Holding current
IH
VD = 24V, RL = 20Ω, TJ = 25°C
-
-
25
mA
Peak on state voltage
VTM
TC = 25°C, ITM = 15A
-
-
1.85
Volts
Switching
Typical critical dv/dt exponential to VDRM
dv/dt
-
-
20
-
V/µs
Thermal
Maximum thermal resistance,
Junction to case
Rth(j-c)
-
-
-
3.1
°C/Watt
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116


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