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2N2573 Scheda tecnica(PDF) 1 Page - Digitron Semiconductors

Il numero della parte 2N2573
Spiegazioni elettronici  SILICON CONTROLLED RECTIFIER
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Produttore elettronici  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N2573 Scheda tecnica(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
2N2573-2N2579
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage (1)
2N2573
2N2574
2N2575
2N2576
2N2578
2N2579
VDRM or VRRM
25
50
100
200
400
500
Volts
On-state current
IT(RMS)
25
Amps
Circuit fusing (8.3ms)
I2t
280
A2s
Peak surge current
(Half cycle, 60Hz, TJ = -65° to +125°C)
ITSM
260
Amps
Peak gate power – forward
PGM
5
Watts
Average gate power – forward
PG(AVG)
0.5
Watts
Peak gate current – forward
IGM
2
Amps
Peak gate voltage
Forward
Reverse
VGFM
VGRM
10
5
Volts
Operating junction temperature range
TJ
-65 to +125
°C
Storage temperature range
Tstg
-65 to +150
°C
Thermal resistance, junction to case
R
ӨJC
1.5
°C/W
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
-
-
-
0.6
10
5
µA
mA
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
IGT
-
-
40
mA
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = rated VDRM, RL = 100Ω, TJ = 125°C)
VGT
-
0.3
0.7
-
3.5
-
Volts
Forward on voltage
(ITM = 20A)
VTM
-
1.1
1.4
Volts
Holding current
(VD = 7V, gate open)
IH
-
10
-
mA
Turn-on time (td + tr)
(IGT = 50mA, IT = 10A, VD = rated VDRM)
tgt
-
1
-
µs
Turn-off time
(IT = 10A, IR = 10A, dv/dt = 20V/µs, TJ = 125°C)
(VD = rated voltage VDRM)
tq
-
30
-
µs
Forward voltage application rate
(exponential)
(Gate open, TJ = 125°C, VD = rated VDRM)
dv/dt
-
30
-
V/µs


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