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2N3032 Scheda tecnica(PDF) 1 Page - Digitron Semiconductors

Il numero della parte 2N3032
Spiegazioni elettronici  0.5 AMP SILICON CONTROLLED RECTIFIER
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Produttore elettronici  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N3032 Scheda tecnica(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N3027-2N3032
0.5 AMP SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Characteristic
Symbol
2N3027
2N3030
2N3028
2N3031
2N3029
2N3032
Repetitive peak off-state voltage
VDRM
30V
60V
100V
Repetitive peak reverse voltage
VRRM
30V
60V
100V
DC on-state current
100°C case
75°C ambient
IT
500mA
250mA
Repetitive peak on-state current
ITRM
30A
Surge (non-repetitive) on-state current
50ms
8ms
ITSM
5A
8A
Peak gate current
IGM
250mA
Average gate current
IG(AV)
25mA
Reverse gate voltage
VGR
5V
Reverse gate current
IGR
3mA
Storage temperature range
Tstg
-65°C to +200°C
Operating temperature range
TJ
-65°C to +150°C
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
25°C tests
Off state current
IDRM
-
0.002
0.100
µA
RGK = 1KΩ, VDRM = rating
Reverse current
IRRM
-
0.002
0.100
µA
RGK = 1KΩ, VRRM = rating
Reverse gate voltage
VGR
5
8
-
V
IGR = 0.1mA
Gate trigger current
IGT
-5
8
200
µA
RGS = 10KΩ, VD = 5V
Gate trigger voltage
VGT
0.400
0.550
0.800
V
RGS = 100Ω, VD = 5V
On-state voltage
VT
0.800
1.200
1.500
V
IT = 1A (pulse test)
Holding current
IH
0.300
0.700
5.000
mA
RGK = 1KΩ, VD = 5V
Off-state voltage – critical rate of rise
dv/dt
30
15
10
60
30
25
-
-
-
V/µs
RGK = 1KΩ, VD = 30V (2N3027)
RGK = 1KΩ, VD = 60V (2N3028)
RGK = 1KΩ, VD = 100V (2N3029)
Gate trigger-on pulse width
tpg(on)
-
0.070
0.200
µs
IG = 10mA, IT = 1A, VD = 30V
Delay time
td
-
0.080
-
µs
IG = 10mA, IT = 1A, VD = 30V
Rise time
tr
-
0.040
-
µs
IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time
tg
-
0.700
2.000
µs
IT = 1A, IR = 1A, RGK = 1KΩ
150°C Tests
High temperature off-state current
IDRM
-
2
20
µA
RGK = 1KΩ, VDRM = rating
High temperature reverse current
IRRM
-
20
50
µA
RGK = 1KΩ, VRRM = rating
High temperature gate trigger voltage
VGT
0.100
0.150
0.600
V
RGS = 100Ω, VD = 5V
High temperature holding current
IH
0.050
0.200
1.000
mA
RGK = 1KΩ, VD = 5V
-65°C Tests
Low temperature gate trigger voltage
VGT
0.600
0.750
1.100
V
RGS = 100Ω, VD = 5V
Low temperature gate trigger current
IGT
0
150
1.200
mA
RGS = 10KΩ, VD = 5V
Low temperature holding current
IH
0.500
3.500
10
mA
RGK = 1KΩ, VD = 5V
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116


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