DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121019

2N3980

PN UNIJUNCTION TRANSISTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

360

mW

RMS emitter current

60

mA

1

Amp

Emitter reverse voltage

30

Volts

Interbase voltage

35

Volts

Storage temperature range

-65 to 200

°C

Note 1: Derate 2.4mW/°C increase in ambient temperature. Total power dissipation must be limited by external circuitry.

Note 2: Capacitance discharge current must fall to 0.37 Amp within 3ms and PRR ≤ 10PPS.

Characteristic

Symbol

Min

Typ

Max

Unit

Intrinsic standoff ratio

ŋ

0.68

-

0.82

-

Interbase resistance

4

6

8

kΩ

Interbase resistance temperature coefficient

0.4

-

0.9

%/°C

Emitter saturation voltage

-

2.5

3

Volts

Modulated interbase current

12

15

-

mA

Emitter reverse current

-

-

5

-

10

1

nA

µA

Peak point emitter current

-

0.6

2

µA

Valley point current

1

4

10

mA

Figure 3

6

8

-

Volts

Maximum oscillation frequency

Figure 4

-

400

-

kHz

Note 1: Intrinsic standoff ratio,

ŋ is defined by equation:

Note 2: Use pulse techniques: PW ≈ 300µs duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.

Note 3: Base-one peak pulse voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in ACR firing circuits and

other types of pulse circuits.