3N204 datasheet(1/2 Pages) DIGITRON

Il numero della parte	3N204

Spiegazioni elettronici	DUAL GATE MOSFET

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Produttore elettronici	DIGITRON [Digitron Semiconductors]

Homepage	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

3N204-3N205

DUAL GATE MOSFET

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

25

Vdc

Drain-Gate Voltage

VDG

30

Vdc

Drain Current

lD

50

mA

Reverse Gate Current

lG

-10

mA

Forward Gate Current

lGF

10

mA

Total Device Dissipation @ TA=25°C

Derate above 25°C

PD

360

2.4

mW

mW/°C

Lead Temperature

TL

300

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

-65 to +175

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

CHARACTERISTIC

SYMBOL

MIN

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(lD=10μA, VG1=VG2=-5.0V)

V(BR)DSX

25

-

Vdc

Gate 1-Source Breakdown Voltage

(lG1=+/- 10 mA) Note 1

V(BR)G1SO

+/-6

+/-30

Vdc

Gate 2-Source Breakdown Voltage

(lG2=+/-10mA) Note 1

V(BR)G2SO

+/-6

+/-30

Vdc

Gate 1 Leakage Current

(VG1S=+/-5.0V, VG2S=VDS=0)

lG1SS

-

+/-10

nA

Gate 2 Leakage Current

(VG2S=+/-5.0V, VG1S=VDS=0)

lG2SS

-

+/-10

nA

Gate 1 to Source Cutoff Voltage

(VDS=15V, VG2S=4.0V, lD=20μA)

VG1S(off)

-0.5

-4.0

Vdc

Gate 2 to Source Cutoff Voltage

(VDS=15V, VG1S=0V, lD=20μA)

VG2S(off)

-0.2

-4.0

Vdc

ON CHARACTERISTICS

Zero-Gate-Voltage Drain Current *

(VDS=15V, VG2S=4.0V, VG1S=0V)

lDSS*

6

30

mA

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS=15V, VG2S=4.0V, VG1S=0V, f=1.0kHz) Note 2

│Yfs│

10

22

mmhos

Input Capacitance

(VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0Mhz)

Ciss

TYP.3.0

pF

Reverse Transfer Capacitance

(VDS=15V, VG2S=4.0V, lD=10mA, f=1.0MHz)

Crss

0.005

0.03

pF

Output Capacitance

(VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0MHz)

Coss

TYP. 1.4

pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDS=15V, VG2S=4.0v, lD=10mA, f=450MHZ)

3N204

NF

-

3.5

5.0

dB

Common Source Power Gain

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDS=15V, VG2S=4.0V, lD=10mA, f=450MHz)

3N204

Gps

20

14

28

-

dB

Bandwidth

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDD=18V, fLO=245MHz, fRF=200MHz)Note 4

3N205

BW

7.0

4.0

12

7.0

MHz

Gain Control Gate Supply Voltage(Note 3)

(VDD=18V,

GPS=300dB,f=200MHz)

3N204

VGG(GC)

0

-2.0

Vdc

Conversion Gain (Note 4)

(VDD=18V, fLO=245MHz, fRF=200MHz)

3N205

G(conv.)

17

28

dB

*PW=30μs, Duty Cycle ≤ 2.0%.

1) All gate breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly.

2) This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating.

3)

Gps is defined as the change in Gps from the value at VGG=7.0V.

4) Amplitude at input from local oscillator is 3 volts RMS.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120705

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