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SI7840BDP Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI7840BDP Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 73218 S09-0272-Rev. C, 16-Feb-09 www.vishay.com 3 Vishay Siliconix Si7840BDP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0 5 10 15 20 25 30 35 40 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 1 2 3 4 5 6 0 2 4 6 8 101214 16 VDS = 15 V ID = 16.5 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150˚C TJ = 25˚C 40 10 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 16.5 A TJ - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 02468 10 VGS - Gate-to-Source Voltage (V) ID = 16.5 A |
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