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SI7108DN Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI7108DN Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 73216 S-80581-Rev. E, 17-Mar-08 www.vishay.com 3 Vishay Siliconix Si7108DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0 102030 405060 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 10203040 50 VDS = 10 V ID = 22 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 60 10 1 TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 3000 04 8 12 16 20 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 22 A TJ - Junction Temperature (°C) 0.000 0.003 0.006 0.009 0.012 0.015 0 2468 10 VGS - Gate-to-Source Voltage (V) ID = 22 A |
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