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SD106WS-GS08 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SD106WS-GS08 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85685 Rev. 1.3, 12-Dec-05 SD106WS Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 100 µA VR 30 V Leakage current VR = 30 V IR 5.0 µA Forward voltage IF = 2.0 mA VF 260 mW IF = 15 mA VF 320 mW IF = 100 mA VF 420 mW IF = 200 mA VF 490 550 mW Diode capacitance VR = 10 V, f = 1.0 MHz Ctot 15 pF Figure 1. Forward Current vs. Forward Voltage Figure 2. Typical Variation of Reverse Current at Various Temperatures 18501 1000 100 10 1 0.1 0.01 00.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 = 125 °C Tamb 40 °C 25 °C VF - Forward Voltage (V) 18502 = 125 °C Tamb 100 °C 75 °C 50 °C 25 °C 1000 100 10 1 0.1 0.01 10 15 05 25 30 20 VR - Reverse Voltage (V) Figure 3. Typical Capacitance °C vs. Reverse Applied Voltage VR 18503 45 40 35 30 25 20 15 10 5 0 04 8 12 16 20 24 28 VR - Reverse Voltage (V) |
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