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2SC3837K Scheda tecnica(PDF) 1 Page - Rohm |
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2SC3837K Scheda tecnica(HTML) 1 Page - Rohm |
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1 / 5 page  1/3 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’ Cc and high gain. (Typ. 6ps) 3) Small NF. Packaging specifications and hFE Type 2SC4725 EMT3 NP AC∗ TL 3000 2SC5661 VMT3 NP AC∗ T2L 8000 2SC4082 UMT3 NP 1C∗ T106 3000 2SC3837K SMT3 NP AC∗ T146 3000 ∗ Denotes hFE Package hFE Marking Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25 C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 20 3 50 0.2 150 −55 to +150 Unit V V V mA 0.15 2SC4082, 2SC3837K 2SC5661, 2SC4725 W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Dimensions (Unit : mm) (2) (1) 0.4 (3) 2.9 1.9 0.95 0.95 0.8 0.15 1.1 (2) Base (3) Collector (1) Emitter (3) Collector (1) Emitter (2) Base (3) Collector (1) Emitter (2) Base Each lead has same dimensions Each lead has same dimensions 2SC4725 2SC4082 2SC3837K 2SC5661 ROHM : VMT3 ROHM : EMT3 EIAJ : SC-75A ROHM : UMT3 EIAJ : SC-70 ROHM : SMT3 EIAJ : SC-59 (1) Base (2) Emitter (3) Collector Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob rbb'·Cc NF 30 20 3 − − 82 600 − − − − − − − 1500 0.9 − − − 0.5 0.5 180 − 1.5 V V V μA μA − MHz pF IC = 10μA IC = 1mA IE = 10μA VCB = 15V VEB = 2V VCE(sat) −− 0.5 V IC/IB = 20mA/4mA VCE/IC = 10V/10mA VCE = 10V , IE = −10mA , f = 200MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50Ω − 613 ps − 4.5 − dB Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Collector-emitter saturation voltage Collector-base time constant Noise factor This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. |
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