 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
IRF8327STRPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF8327STRPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF8327SPbF 2 www.irf.com Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.1 7.3 mΩ ––– 8.5 10.9 VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 25 ––– ––– S Qg Total Gate Charge ––– 9.2 14 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC Qgd Gate-to-Drain Charge ––– 3.0 ––– Qgodr Gate Charge Overdrive ––– 2.3 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.2 ––– Qoss Output Charge ––– 7.9 ––– nC RG Gate Resistance ––– 2.1 3.7 Ω td(on) Turn-On Delay Time ––– 7.8 ––– tr Rise Time ––– 8.9 ––– ns td(off) Turn-Off Delay Time ––– 9.3 ––– tf Fall Time ––– 5.3 ––– Ciss Input Capacitance ––– 1430 ––– Coss Output Capacitance ––– 370 ––– pF Crss Reverse Transfer Capacitance ––– 140 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 52 (Body Diode) A ISM Pulsed Source Current ––– ––– 110 (Body Diode) Ãg VSD Diode Forward Voltage ––– 0.80 1.0 V trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 19 29 nC di/dt = 230A/μs i TJ = 25°C, IS = 11A, VGS = 0V i showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 11A i VDS = VGS, ID = 25μA TJ = 25°C, IF = 11A VGS = 4.5V ID = 11A VGS = 0V VDS = 15V ID = 11A VDD = 15V, VGS = 4.5VÃi Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 14A i VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 15V VDS = 24V, VGS = 0V, TJ = 125°C MOSFET symbol RG = 1.8Ω VDS = 15V, ID = 11A Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V |
Codice articolo simile - IRF8327STRPBF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
