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IRF8306MPBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF8306MPBF
Spiegazioni elettronici  HEXFET Power MOSFET plus Schottky Diode
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF8306MPBF Scheda tecnica(HTML) 1 Page - International Rectifier

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5/4/11
IRF8306MPbF
IRF8306MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
Notes:
DirectFET
™ ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
l RoHS Compliant Containing No Lead and Halogen Free

l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
PD - 97670
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
ID = 23A
TJ = 25°C
TJ = 125°C
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
18
Max.
18
140
180
±20
30
23
230
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
0
2040
6080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 24V
VDS= 15V
VDS= 6V
ID= 18A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
25nC
6.7nC
3.0nC
29nC
22nC
1.8V
DD
G
S
S


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