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IRF7946PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF7946PBF
Spiegazioni elettronici  DirectFETPower MOSFET
Download  12 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7946PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF7946PbF
2
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Notes:
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Ž Used double sided cooling , mounting pad with large heatsink.
 T
C measured with thermocouple mounted to top (Drain) of part.
ΠSurface mounted on 1 in. square Cu
(still air).
 Mounted to a PCB with
small clip heatsink (still air)
 Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
TJ
Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
l
IAR
Avalanche Current
Ãd
A
EAR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJA
Junction-to-Ambient
n
–––
55
RJA
Junction-to-Ambient
p
12.5
–––
RJA
Junction-to-Ambient
o
20
–––
°C/W
RJC
Junction-to-Case
qk
–––
1.3
RJA-PCB
Junction-to-PCB Mounted
1.0
–––
96
Max.
198
™
125
™
793
90
163
-55 to + 150
A
°C
85
See Fig. 14, 15, 22a, 22b
± 20
0.77
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.1
1.4
m
1.7
–––
m
VGS(th)
Gate Threshold Voltage
2.2
3.0
3.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.67
–––
VGS = 20V
VGS = -20V
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 6.0V, ID = 72A g
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mAd
VGS = 10V, ID = 90A g
VDS = VGS, ID = 150μA


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