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IRF6718L2TRPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF6718L2TRPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 07/27/11 IRF6718L2TRPbF IRF6718L2TR1PbF DirectFET® Power MOSFET Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.44mH, RG = 25Ω, IAS = 49A. Notes: DirectFET ® ISOMETRIC L6 S1 S2 SB M2 M4 L4 L6 L8 l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Very Low R DS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques Description The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications. 2 4 6 8 10 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 ID = 61A TJ = 25°C TJ = 125°C 0 20 40 60 80 100 120 140 160 180 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V ID= 49A VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 20nC 9.4nC 67nC 50nC 1.9V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 530 Max. 52 270 490 ±20 25 61 49 PD - 97395E |
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