 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
IRF6636PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6636PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
|
|
1 / 10 page  www.irf.com 1 05/29/06 IRF6636PbF IRF6636TRPbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Notes: DirectFET ISOMETRIC ST SQ SX ST MQ MX MT 010 20 30 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 16V VDS= 10V ID= 14A VDSS VGS RDS(on) RDS(on) 20V max ±20V max 3.2m Ω@ 10V 4.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 18A TJ = 25°C TJ = 125°C PD - 97219 l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 14 Max. 15 81 140 ±20 20 18 28 Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. |
Codice articolo simile - IRF6636PBF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
