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IRF6201TRPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF6201TRPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6201PbF 2 S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 4.6 ––– mV/°C RDS(on) ––– 1.90 2.45 ––– 2.10 2.75 VGS(th) Gate Threshold Voltage 0.5 ––– 1.1 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Qg Total Gate Charge ––– 130 195 Qgs Gate-to-Source Charge ––– 16 ––– Qgd Gate-to-Drain Charge ––– 60 ––– td(on) Turn-On Delay Time ––– 29 ––– tr Rise Time ––– 100 ––– td(off) Turn-Off Delay Time ––– 320 ––– tf Fall Time ––– 265 ––– Ciss Input Capacitance ––– 8555 ––– Coss Output Capacitance ––– 1735 ––– Crss Reverse Transfer Capacitance ––– 1290 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 82 120 ns Qrr Reverse Recovery Charge ––– 180 270 nC Thermal Resistance Parameter Units RθJL Junction-to-Drain Lead f RθJA Junction-to-Ambient e Typ. ––– ––– °C/W Max. 20 50 Static Drain-to-Source On-Resistance A ––– ––– ––– ––– 2.5 110 nA nC ns pF RG = 6.8 Ω VDS = 16V, VGS = 0V, TJ = 125°C VDD = 20V, VGS = 4.5V ID = 1.0A VDS = 10V VGS = 12V VGS = -12V VGS = 4.5V m Ω µA TJ = 25°C, IF = 2.5A, VDD = 16V di/dt = 100/µs d TJ = 25°C, IS = 2.5A, VGS = 0V d showing the integral reverse p-n junction diode. MOSFET symbol ID = 22A VDS = 16V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 27A d VGS = 2.5V, ID = 22A d Conditions See Figs. 10a & 10b ƒ = 1.0MHz VGS = 0V VDS = 16V |
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