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L6571AD013TR Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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L6571AD013TR Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 12 page January 2010 Doc ID 4946 Rev 6 1/12 12 L6571 High voltage half bridge driver with oscillator Features ■ High voltage rail up to 600 V ■ BCD off line technology ■ 15.6 V Zener clamp on Vs ■ Driver current capability: – Sink current = 270 mA – Source current = 170 mA ■ Very low start up current: 150 mA ■ Undervoltage lockout with hysteresis ■ Programmable oscillator frequency ■ Dead time 1.25 μs (L6571A) or 0.72 μs (L6571B) ■ dV/dt immunity up to ±50 V/ns ■ ESD protection Description The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross- conduction of the power devices. Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25 μs and 0.72 μs (typ.) DIP-8 SO8 Figure 1. Block diagram www.st.com |
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