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2N4900 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2N4900 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N4898 2N4899 2N4900 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N4898 -40 2N4899 -60 VCEO(SUS) Collector-emitter sustaining voltage 2N4900 IC=-0.1A ;IB=0 -80 V VCE(sat) Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 V VBE(sat) Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.3 V VBE(on) Base-emitter on voltage IC=-1A ; VCE=-1V -1.3 V 2N4898 VCE=-20V; IB=0 2N4899 VCE=-30V; IB=0 ICEO Collector cut-off current 2N4900 VCE=-40V; IB=0 -0.5 mA ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=150 -0.1 -1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-50mA ; VCE=-1V 40 hFE-2 DC current gain IC=-500mA ; VCE=-1V 20 100 hFE-3 DC current gain IC=-1.0A ; VCE=-1V 10 COB Output capacitance IE=0;VCB=-10V;f=1MHz 100 pF fT Transition frequency IC=-250mA;VCE=-10V 3.0 MHz |
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