2SD1415A datasheet(2/5 Pages) TOSHIBA

Il numero della parte	2SD1415A

Spiegazioni elettronici	TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

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2SD1415A

2009-12-21

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

0.75

―

3.0

mA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 50 mA, IB = 0

100

―

V

hFE (1)

VCE = 3 V, IC = 3 A

2000

―

15000

DC current gain

hFE (2)

VCE = 3 V, IC = 6 A

1000

―

Collector-emitter saturation voltage

VCE (sat)

IC = 3 A, IB = 6 mA

―

0.9

1.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 3 A, IB = 6 mA

―

1.5

2.0

V

Turn-on time

ton

―

0.3

―

Storage time

tstg

―

5.1

―

Switching time

Fall time

tf

IB1 = 6 mA,IB2 = 6 mA

duty cycle ≤ 1%

―

0.6

―

μs

Marking

Note2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

20 μs

VCC ≈ 45 V

Output

IB2

IB1

Input

Lot No.

Note 2

D1415A

Part No. (or abbreviation code)

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