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2SD1415A Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SD1415A Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SD1415A 2009-12-21 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V DC IC 7 Collector current Pulse ICP 10 A Base current IB 0.7 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Base Emitter ≈ 5 kΩ ≈ 150 Ω Collector |
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