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2SD1415A Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SD1415A
Spiegazioni elettronici  TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SD1415A Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SD1415A
2009-12-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1415A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
7
Collector current
Pulse
ICP
10
A
Base current
IB
0.7
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
≈ 5 kΩ
≈ 150 Ω
Collector


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