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TPM2626-60 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TPM2626-60 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2 TPM2626-60 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 26.0 Total Power Dissipation (Tc= 25 °C ) PT W 187.5 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 PACKAGE OUTLINE (2-16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 °C. |
Codice articolo simile - TPM2626-60 |
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Descrizione simile - TPM2626-60 |
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