Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

SI3445DV-T1-E3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI3445DV-T1-E3
Spiegazioni elettronici  P-Channel 1.8-V (G-S) MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3445DV-T1-E3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

  SI3445DV-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 7Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 8Page - Vishay Siliconix SI3445DV-T1-E3 Datasheet HTML 9Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
www.vishay.com
2
Document Number: 70820
S09-0766-Rev. C, 04-May-09
Vishay Siliconix
Si3445DV
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
- 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 70 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 5 V, VGS = - 4.5 V
- 15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 5.6 A
0.034
0.042
Ω
VGS = - 2.5 V, ID = - 4.7 A
0.048
0.060
VGS = - 1.8 V, ID = - 2.0 A
0.062
0.080
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 5.6 A
15
S
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
- 0.7
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 4.5 V, ID = - 5.6 A
15
25
nC
Gate-Source Charge
Qgs
3
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
20
40
ns
Rise Time
tr
50
100
Turn-Off Delay Time
td(off)
110
220
Fall Time
tf
60
120
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, dI/dt = 100 A/µs
60
100


Codice articolo simile - SI3445DV-T1-E3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
VBsemi Electronics Co.,...
SI3445DV-T1-GE3 VBSEMI-SI3445DV-T1-GE3 Datasheet
440Kb / 9P
   P-Channel 60-V (D-S) MOSFET
More results

Descrizione simile - SI3445DV-T1-E3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Vishay Siliconix
SI1305DL VISHAY-SI1305DL Datasheet
42Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. C, 07-Apr-03
SI2311DS-T1-E3 VISHAY-SI2311DS-T1-E3 Datasheet
214Kb / 8P
   P-Channel 1.8-V (G-S) MOSFET
Rev. B, 24-Mar-08
SI1407DL-T1 VISHAY-SI1407DL-T1 Datasheet
80Kb / 5P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 12-Jun-06
SI4465ADY VISHAY-SI4465ADY Datasheet
216Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. A, 01-Jan-07
SI6467BDQ VISHAY-SI6467BDQ_05 Datasheet
196Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. B, 12-Dec-05
SI1307DL VISHAY-SI1307DL Datasheet
68Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. A, 01-Nov-99
SI1407DL VISHAY-SI1407DL Datasheet
64Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. C, 17-Jul-00
SI1305DL VISHAY-SI1305DL_08 Datasheet
109Kb / 5P
   P-Channel 1.8-V (G-S) MOSFET
S-51075-Rev. D, 13-Jun-05
logo
Leshan Radio Company
LSI1013XT1G LRC-LSI1013XT1G Datasheet
371Kb / 6P
   P-Channel 1.8-V (G-S) MOSFET
logo
Vishay Siliconix
SI6467BDQ-T1-E3 VISHAY-SI6467BDQ-T1-E3 Datasheet
208Kb / 11P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 31-Mar-08
SI2315BDS VISHAY-SI2315BDS_V01 Datasheet
181Kb / 8P
   P-Channel 1.8-V (G-S) MOSFET
01-Jan-2022
More results


Html Pages

1 2 3 4 5 6 7 8 9


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com