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M74VHC1GU04DFT2G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte M74VHC1GU04DFT2G
Spiegazioni elettronici  Single Unbuffered Inverter
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

M74VHC1GU04DFT2G Scheda tecnica(HTML) 2 Page - ON Semiconductor

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MC74VHC1GU04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
−20
mA
IOK
DC Output Diode Current
$20
mA
IOUT
DC Output Sink Current
$12.5
mA
ICC
DC Supply Current per Supply Pin
$25
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
)150
°C
qJA
Thermal Resistance
SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
PD
Power Dissipation in Still Air at 85
°C
SC70−5/SC−88A
TSOP−5
150
200
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u1500
u200
N/A
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
*55
)125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature
5C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature


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