STF2N62K3 datasheet(9/25 Pages) STMICROELECTRONICS

Il numero della parte	STF2N62K3

Spiegazioni elettronici	N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STB/D/F/P/U2N62K3

Test circuits

Doc ID 018898 Rev 2

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3

Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 20. Gate charge test circuit

Figure 21. Test circuit for inductive load

switching and diode recovery times

Figure 22. Unclamped inductive load test

circuit

Figure 23. Unclamped inductive waveform

Figure 24. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3

μF

VDD

AM01469v1

VDD

47k

Ω

1k

Ω

47k

Ω

2.7k

Ω

1k

Ω

12V

Vi=20V=VGMAX

2200

μF

PW

IG=CONST

100

Ω

100nF

D.U.T.

VG

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

RG

G

FAST

DIODE

D

S

L=100

μH

μF

3.3

1000

μF

VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200

μF

3.3

μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

VGS

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STMicroelectronics	STB5N62K3	1Mb / 19P	N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
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