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FDD8447L-F085 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD8447L-F085 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDD8447L_F085 Rev. A1 www.fairchildsemi.com 2 MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage (Note 1) 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (TC < 80oC, VGS = 10V) 50 A Pulsed See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 40 mJ PD Power Dissipation 65 W Dreate above 25oC0.43 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 oC RθJC Maximum Thermal Resistance Junction to Case 2.3 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8447L FDD8447L_F085 D-PAK(TO-252) 13’’ 12mm 2500 units Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V - - 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V rDS(on) Drain to Source On Resistance ID = 14A, VGS = 10V - 7.0 8.5 m Ω ID = 11A, VGS = 4.5V - 8.5 11.0 ID = 14A, VGS = 10V, TJ = 125°C - 10.4 14.0 gFS Forward Transconductance ID = 14A, VDS = 5V - 58 - S Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz - 1970 - pF Coss Output Capacitance - 250 - pF Crss Reverse Transfer Capacitance - 150 - pF Rg Gate Resistance f = 1MHz - 1.27 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 14A VGS = 10V -37 52 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V - 20 28 nC Qgs Gate to Source Gate Charge -6 - nC Qgd Gate to Drain “Miller“ Charge - 7 - nC |
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