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TC7S66FU Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC7S66FU Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TC7S66F/FU 2009-09-30 4 AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns) Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 2.0 ⎯ 20 75 ⎯ 100 4.5 ⎯ 7 15 ⎯ 20 9.0 ⎯ 4 12 ⎯ 15 Phase difference between input and output φI-O ⎯ 12.0 ⎯ 4 11 ⎯ 14 ns 2.0 ⎯ 20 150 ⎯ 190 4.5 ⎯ 13 30 ⎯ 38 9.0 ⎯ 9 18 ⎯ 33 Output enable time tpZL tpZH RL = 1 kΩ 12.0 ⎯ 8 18 ⎯ 27 ns 2.0 ⎯ 40 170 ⎯ 220 4.5 ⎯ 11 35 ⎯ 44 9.0 ⎯ 10 30 ⎯ 38 Output disable time tpLZ tpHZ RL = 1 kΩ 12.0 ⎯ 9 27 ⎯ 33 ns 2.0 ⎯ 30 ⎯ ⎯ ⎯ 4.5 ⎯ 30 ⎯ ⎯ ⎯ 9.0 ⎯ 30 ⎯ ⎯ ⎯ Maximum control input frequency ⎯ RL = 1 kΩ CL = 15 pF VOUT = 1/2 VCC 12.0 ⎯ 30 ⎯ ⎯ ⎯ MHz Control input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 ⎯ Switch terminal capacitance CI/O ⎯ ⎯ 6 ⎯ ⎯ ⎯ pF Feedthrough capacitance CIOS ⎯ ⎯ 0.5 ⎯ ⎯ ⎯ ⎯ Power dissipation capacitance CPD (Note) ⎯ 15 ⎯ ⎯ ⎯ ⎯ Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD • VCC • fIN + ICC Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note) Characteristics Symbol Test Condition VCC (V) Typ. Unit 4.5 0.05 Total harmonic distortion (T.H.D) ⎯ fIN = 1 kHz, VIN = 4 Vpp (VCC = 4.5 V) RL = 10 kΩ, VIN = 8 Vpp (VCC = 9.0 V) CL = 50 pF 9.0 0.04 % 4.5 200 Maximum propagation frequency (switch on) fMAX Adjust fIN voltage to obtain 0dBm at VOS increase fIN frequency until dB meter reads −3dB. RL = 50 Ω, CL = 10 pF fIN = 1 MHz, Sine wave 9.0 200 MHz 4.5 −60 Feedthrough (switch on) ⎯ VIN is centered at VCC/2 adjust input for 0dBm RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Sine wave 9.0 −60 dB 4.5 60 Crosstalk (control switch) ⎯ RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Pulse (tr = tf = 6 ns) 9.0 100 mV Note: These characteristics are determined by design of devices. |
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