FDD86113LZ datasheet(4/6 Pages) FAIRCHILD

Il numero della parte	FDD86113LZ

Spiegazioni elettronici	N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FDD86113LZ Rev. C1

Figure 7.

01

234

0

2

4

6

8

10

ID = 4.2 A

VDD = 25 V

VDD = 50 V

Qg, GATE CHARGE (nC)

VDD = 75 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

1

10

100

1000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

2

1

2

3

4

5

6

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

2

4

6

8

10

12

Limited by Package

VGS = 4.5 V

RθJC = 4.3

oC/W

VGS = 10 V

T

C

, CASE TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11. Gate Leakage Current vs

Gate to Source Voltage

0

5

10

15

20

25

30

35

10

-10

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

VGS = 0 V

TJ = 25 oC

TJ = 125 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 12.

0.1

1

10

100

400

0.05

0.1

1

10

20

100 μs

10 ms

DC

1 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 4.3

oC/W

TC = 25

oC

Forward Bias Safe

Operating Area

Typical Characteristics T

J = 25 °C unless otherwise noted

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