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TLP785GBFC Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TLP785GBFC
Spiegazioni elettronici  Office Equipment Household Appliances
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP785GBFC Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TLP785,TLP785F
2012-02-20
3
Recommended Operating Conditions (Note)
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
5
24
V
Forward current
IF
16
25
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
−25
85
°C
(Note): Recommended operating conditions are given as a design guideline
to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively.
In developing designs using this product, please confirm
specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V = 0V, f = 1 MHz
30
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
V
VCE = 24 V
0.01
0.1
μA
Collector dark current
ID(ICEO)
VCE = 24 V ,Ta = 85°C
0.6
50
μA
Capacitance
(collector to emitter)
CCE
V = 0V, f = 1 MHz
6
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
50
600
Current transfer ratio
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
30
%
IC = 2.4 mA, IF = 8 mA
0.4
0.2
Collector−emitter saturation
voltage
VCE (sat)
IC = 0.2 mA, IF = 1 mA
Rank GB
0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance
(input to output)
CS
VS = 0V, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V
1×10
12
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc


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