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STP25N80K5 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP25N80K5
Spiegazioni elettronici  N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
4/22
DocID023466 Rev 2
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
ID = 1 mA
800
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 800 V
VDS = 800 V, Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID= 10 A
0.19
0.260
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS =100 V, f=1 MHz, VGS=0
-1600
-
pF
Coss
Output capacitance
-
130
-
pF
Crss
Reverse transfer
capacitance
-2
-
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent capacitance time
related
VGS = 0, VDS = 0 to 640 V
-185
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent capacitance
energy related
-300
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
4
-
Ω
Qg
Total gate charge
VDD = 640 V, ID = 19.5 A
VGS =10 V
(see Figure 19)
-40
-
nC
Qgs
Gate-source charge
-
10
nC
Qgd
Gate-drain charge
-
25
nC


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