FQA11N90F109 datasheet(4/8 Pages) FAIRCHILD

Il numero della parte	FQA11N90F109

Spiegazioni elettronici	N-Channel QFET짰 MOSFET 900 V, 11.4 A, 960 m廓

Download	8 Pages

Scroll/Zoom	100%

Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

Logo

4 / 8 page

FQA11N90_F109 Rev. C1

www.fairchildsemi.com

4

25

50

75

100

125

150

0

2

4

6

8

10

12

T

C, Case Temperature [

]

℃

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

10 μs

DC

10 ms

1 ms

100 μs

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※

Notes :

1. V

GS = 10 V

2. I

D = 5.7 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. V

GS = 0 V

2. I

D = 250 μ A

T

J, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

※

N o te s :

1 . Z

θ JC( t ) = 0. 42

/W M a x .

℃

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s ingle puls e

D= 0 .5

0.02

0.2

0.05

0.1

0.01

t

1 , S q u a r e W a v e P u l s e D u r a ti o n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

Codice articolo simile - FQA11N90F109

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FQA11N90	679Kb / 8P	900V N-Channel MOSFET
	FQA11N90	816Kb / 9P	900V N-Channel MOSFET
	FQA11N90	828Kb / 9P	900V N-Channel MOSFET
Inchange Semiconductor ...	FQA11N90	362Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	FQA11N90C	707Kb / 8P	900V N-Channel MOSFET

More results

Descrizione simile - FQA11N90F109

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FQA8N90C-F109	1Mb / 8P	N-Channel QFET짰 MOSFET 900 V, 8 A, 1.9 廓
	FQPF6N90CT	1Mb / 10P	N-Channel QFET짰 MOSFET 900 V, 6.0 A, 2.3 廓
	FQB5N90TM	785Kb / 8P	N-Channel QFET짰 MOSFET 900 V, 5.4 A, 2.3 廓
	FQD2N90TF	1Mb / 9P	N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓
	FQB11N40CTM	977Kb / 8P	N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓
	FQB9N50CTM	487Kb / 8P	N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓
	FQD17P06TF	1Mb / 8P	N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓
	FQD20N06LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 60 V, 17.2 A, 42 m廓
	FQD10N20LTM	765Kb / 8P	N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓
	FQB19N20LTM	868Kb / 8P	N-Channel QFET짰 MOSFET 200 V, 21 A, 140 m廓

More results

FQA11N90F109 Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

FQA11N90F109 Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

Codice articolo simile - FQA11N90F109

Descrizione simile - FQA11N90F109

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL