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TS3DDR32611ZQCR Scheda tecnica(PDF) 1 Page - Texas Instruments |
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TS3DDR32611ZQCR Scheda tecnica(HTML) 1 Page - Texas Instruments |
1 / 13 page VTT Regulator OBT_EN VTT_EN PGND VTTSNS VTT VDD 3.3V Supply GND VDDQ TS3DDR32611 VREF VLDOIN TS3DDR32611 www.ti.com SCDS347A – AUGUST 2013 – REVISED SEPTEMBER 2013 1A Peak Sink/Source PCDDR3 Termination Regulator with Integrated Isolation Switch and Low Power Mode Operation Check for Samples: TS3DDR32611 1 FEATURES DESCRIPTION The TS3DDR32611 is a sink/source double data rate • VDD Range – 3.0V to 3.6V type III (PCDDR3) termination regulator with a 1% • RON 1.75Ω typical accuracy buffered reference output. It has built-in • Channel Count – 26 termination SPST switches that can be disconnected when the memory system undergoes lower speed • VDDQ – Input Voltage 1.2V to 3.5V operation without the need of voltage termination. • VTT – VDDQ/2 typical with 1A sink/source Turning off these switches enables significant power capability saving on the memory system. The switches on-state • VREF – VDDQ/2±1% × VDDQ resistance has a typical value of only 1.75 Ω which helps retain signal integrity on the signal lines. • Switch Time – (TON/OFF) 100ns Max • IDD Supply Current The TS3DDR32611 is powered from a 3.3V supply. The VDDQ pin takes 1.2V to 1.8V input while the – High Speed Mode (IDD,HS) 220 µA Max output voltage at VTT pin is tracking 1/2 × VDDQ. The – Low Speed Mode (IDD,LS) 220 µA Max regulator’s VTT output is capable of sinking/sourcing – Power Down Mode (IDD,PD) 5 µA Max up to 1A current, while the VREF pin output is 1/2VDDQ±1% × VDDQ with 5mA current • Special Features sinking/sourcing capability. The TS3DDR32611 has 4 – 1.8-V Compatible Control Inputs (VTT_EN, modes of operation: high speed, low speed, VREF ODT_EN) mode and power down mode, depending on the – High current Sinking/Sourcing Capability: control signals VTT_EN and ODT_EN. These 1A Max different modes of operation provide flexibility to establish a memory system’s performance and power • 48-Ball ZQC Package (4mm x 4mm, 0.5mm consumption. pitch) The TS3DDR32611 is situated within a small 48 balls BGA package with only 4mm x 4mm in size, which APPLICATIONS makes it a perfect candidate to be used in mobile • Double Data Rate type 3 (PCDDR3) termination applications. and regulation in mobile devices SWITCH DIAGRAM 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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