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TS3DDR32611ZQCR Scheda tecnica(PDF) 1 Page - Texas Instruments

Il numero della parte TS3DDR32611ZQCR
Spiegazioni elettronici  1A Peak Sink/Source PCDDR3 Termination Regulator with Integrated Isolation Switch and Low Power Mode Operation
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TS3DDR32611ZQCR Scheda tecnica(HTML) 1 Page - Texas Instruments

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VTT
Regulator
OBT_EN
VTT_EN
PGND
VTTSNS
VTT
VDD
3.3V
Supply
GND
VDDQ
TS3DDR32611
VREF
VLDOIN
TS3DDR32611
www.ti.com
SCDS347A – AUGUST 2013 – REVISED SEPTEMBER 2013
1A Peak Sink/Source PCDDR3 Termination Regulator with Integrated Isolation Switch and
Low Power Mode Operation
Check for Samples: TS3DDR32611
1
FEATURES
DESCRIPTION
The TS3DDR32611 is a sink/source double data rate
VDD Range – 3.0V to 3.6V
type III (PCDDR3) termination regulator with a 1%
RON 1.75Ω typical
accuracy buffered reference output. It has built-in
Channel Count – 26
termination SPST switches that can be disconnected
when the memory system undergoes lower speed
VDDQ – Input Voltage 1.2V to 3.5V
operation without the need of voltage termination.
VTT – VDDQ/2 typical with 1A sink/source
Turning off these switches enables significant power
capability
saving on the memory system. The switches on-state
VREF – VDDQ/2±1% × VDDQ
resistance has a typical value of only 1.75
Ω which
helps retain signal integrity on the signal lines.
Switch Time – (TON/OFF) 100ns Max
IDD Supply Current
The TS3DDR32611 is powered from a 3.3V supply.
The VDDQ pin takes 1.2V to 1.8V input while the
High Speed Mode (IDD,HS) 220 µA Max
output voltage at VTT pin is tracking 1/2 × VDDQ. The
Low Speed Mode (IDD,LS) 220 µA Max
regulator’s VTT output is capable of sinking/sourcing
Power Down Mode (IDD,PD) 5 µA Max
up to 1A current, while the VREF pin output is
1/2VDDQ±1%
×
VDDQ
with
5mA
current
Special Features
sinking/sourcing capability. The TS3DDR32611 has 4
1.8-V Compatible Control Inputs (VTT_EN,
modes of operation: high speed, low speed, VREF
ODT_EN)
mode and power down mode, depending on the
High current Sinking/Sourcing Capability:
control
signals
VTT_EN
and
ODT_EN.
These
1A Max
different modes of operation provide flexibility to
establish a memory system’s performance and power
48-Ball ZQC Package (4mm x 4mm, 0.5mm
consumption.
pitch)
The TS3DDR32611 is situated within a small 48 balls
BGA package with only 4mm x 4mm in size, which
APPLICATIONS
makes it a perfect candidate to be used in mobile
Double Data Rate type 3 (PCDDR3) termination
applications.
and regulation in mobile devices
SWITCH DIAGRAM
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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