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2N4918G Scheda tecnica(PDF) 4 Page - ON Semiconductor

Il numero della parte 2N4918G
Spiegazioni elettronici  Medium-Power Plastic PNP Silicon Transistors
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N4918G Scheda tecnica(HTML) 4 Page - ON Semiconductor

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2N4918 − 2N4920* Series
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
10
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
3.0
5.0
10
20
30
50
100
70
0.2
TJ = 150°C
dc
5.0 ms
100 ms
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20
30
50 70
500 700 1000
ts′ = ts − 1/8 tf
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20
30
50 70
500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 10
IC/IB = 20
IC/IB = 10
IB1 = IB2
VCC = 30 V
IB1 = IB2


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