AD8553 datasheet(4/20 Pages) AD

Il numero della parte	AD8553

Spiegazioni elettronici	1.8 V to 5 V Auto-Zero, In-Amp with Shutdown

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AD8553

Rev. A | Page 4 of 20

VS = 1.8 V, VCM = -0 V, VREF = VS/2, VIN = VINP − VINN, RLOAD = 10 kΩ, TA = 25°C, G = 100, unless specified. See Table 5 for gain setting

resistor values. Temperature specifications guaranteed by characterization.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Input Offset Voltage

VOS

G = 1000

3

20

μV

G = 100

3

20

μV

G = 10

14

50

μV

G = 1

130

375

μV

Vs. Temperature

ΔVOS/ΔT

G = 1000, −40°C ≤ TA ≤ +85°C

0.02

0.25

μV/°C

G = 100, −40°C ≤ TA ≤ +85°C

0.02

0.25

μV/°C

G = 10, −40°C ≤ TA ≤ +85°C

0.1

3

μV/°C

G = 1, −40°C ≤ TA ≤ +85°C

1

10

μV/°C

Input Bias Current

IB

0.05

1

nA

−40°C ≤ TA ≤ +85°C

2

nA

Input Offset Current

IOS

2

nA

VREF Pin Current

IREF

0.02

1

nA

Input Operating Impedance

Differential

50||1

MΩ||pF

Common Mode

10||10

GΩ||pF

Input Voltage Range

0

0.15

V

Common-Mode Rejection

CMR

G = 100, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C

100

110

dB

G = 10, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C

90

110

dB

Gain Error

G = 100, VCM =4.125 mV, VO = 0.075 V to 1.725 V

0.2

0.4

%

G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V

0.2

0.4

%

Gain Drift

G = 10, 100, 1000, −40°C ≤ TA ≤ +85°C

25

ppm/°C

G = 1, −40°C ≤ TA ≤ +85°C

50

ppm/°C

Nonlinearity

G = 100, VCM = 4.125 mV, VO = 0.075 V to 1.725 V

0.003

% FS

G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V

0.010

% FS

VREF Range

0.8

1.0

V

OUTPUT CHARACTERISITICS

Output Voltage High

VOH

1.725

V

Output Voltage Low

VOL

0.075

V

Short-Circuit Current

ISC

±5

mA

POWER SUPPLY

Power Supply Rejection

PSR

G = 100, VS = 1.8 V to 5.5 V, VCM = 0 V

100

120

dB

Supply Current

ISY

IO = 0 mA, VIN = 0 V

0.8

1.2

mA

−40°C ≤ TA ≤ +85°C

1.4

mA

Supply Current Shutdown Mode

ISD

2

4

μA

ENABLE INPUTS

Logic High Voltage

1.4

V

Logic Low Voltage

0.5

V

NOISE PERFORMANCE

Voltage Noise

en p-p

f = 0.01 Hz to 10 Hz

0.7

μV p-p

Voltage Noise Density

en

G = 100, f = 1 kHz

30

nV/√Hz

G = 10, f = 1 kHz

150

nV/√Hz

Internal Clock Frequency

60

kHz

Signal Bandwidth1

G = 1 to 1000

1

kHz

1 Higher bandwidths result in higher noise.

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