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2SK184-GR Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SK184-GR
Spiegazioni elettronici  Low Noise Audio Amplifier Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK184-GR Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SK184
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
Low Noise Audio Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = −30 V, VDS = 0
−1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = −100 μA
−50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
−0.2
−1.5
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f
= 10 Hz
5
10
Noise figure
NF (2)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f
= 1 kHz
1
2
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)


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