 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
SI7113DN-T1-E3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
SI7113DN-T1-E3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 13 page  www.vishay.com 2 Document Number: 73770 S-81544-Rev. C, 07-Jul-08 Vishay Siliconix Si7113DN Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditins is 81 °C/W. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 26 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 100 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.0 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - 1 µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 10 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4 A 0.108 0.134 Ω VGS = - 4.5 V, ID = - 3 A 0.119 0.145 Forward Transconductancea gfs VDS = - 15 V, ID = 4 A 25 S Dynamicb Input Capacitance Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 1480 pF Output Capacitance Coss 80 Reverse Transfer Capacitance Crss 60 Total Gate Charge Qg VDS = - 50 V, VGS = - 10 V, ID = - 4 A 35 55 nC VDS = - 50 V, VGS = - 4.5 V, ID = - 4 A 16.5 25 Gate-Source Charge Qgs 4.7 Gate-Drain Charge Qgd 8 Gate Resistance Rg f = 1 MHz 5.3 8 Ω Turn-On Delay Time td(on) VDD = - 50 V, RL = 12.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω 30 45 ns Rise Time tr 110 165 Turn-Off DelayTime td(off) 51 80 Fall Time tf 40 60 Turn-On Delay Time td(on) VDD = - 50 V, RL = 12.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω 11 18 Rise Time tr 13 20 Turn-Off DelayTime td(off) 42 65 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 13.2 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 46 70 ns Body Diode Reverse Recovery Charge Qrr 97 150 nC Reverse Recovery Fall Time ta 36 ns Reverse Recovery Rise Time tb 10 |
Codice articolo simile - SI7113DN-T1-E3 |
|
Descrizione simile - SI7113DN-T1-E3 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
