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2SC2714-Y Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SC2714-Y Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page 2SC2714 2010-08-24 2 L1: 0.8 mm φ silver plated copper wire, 4T, 10ID, 8 length y Parameter (typ.) (1) Common emitter (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C) Characteristics Symbol Typ. Unit Input conductance gie 2.9 mS Input capacitance Cie 10.2 pF Reverse transfer admittance ⎪yre⎪ 0.33 mS Phase angle of reverse transfer admittance θre −90 ° Forward transfer admittance |yfe| 40 mS Phase angle of forward transfer admittance θfe −20 ° Output conductance goe 45 μS Output capacitance Coe 1.1 pF (2) Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C) Characteristics Symbol Typ. Unit Input conductance gib 34 mS Input capacitance Cib −10 pF Reverse transfer admittance ⎪yrb⎪ 0.27 mS Phase angle of reverse transfer admittance θrb −105 ° Forward transfer admittance |yfb| 34 mS Phase angle of forward transfer admittance θfb 165 ° Output conductance gob 45 μS Output capacitance Cob 1.1 pF Figure1 NF, Gpe Test Circuit |
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