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SI7430DP Scheda tecnica(PDF) 5 Page - Vaishali Semiconductor |
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SI7430DP Scheda tecnica(HTML) 5 Page - Vaishali Semiconductor |
5 / 9 page Document Number: 74282 S11-0212-Rev. C, 14-Feb-11 www.vishay.com 5 Vishay Siliconix Si7430DP TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 6 12 18 24 30 0 255075 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case 0 17 34 51 68 85 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) |
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