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DAC7564ICPWR Scheda tecnica(PDF) 2 Page - Texas Instruments

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Il numero della parte DAC7564ICPWR
Spiegazioni elettronici  12-Bit, Quad Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTER
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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DAC7564ICPWR Scheda tecnica(HTML) 2 Page - Texas Instruments

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DAC7564
SBAS413B
– FEBRUARY 2008 – REVISED MAY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
RELATIVE
DIFFERENTIAL
REFERENCE
SPECIFIED
ACCURACY
NONLINEARITY
DRIFT
PACKAGE-
PACKAGE
TEMPERATURE
PACKAGE
PRODUCT
(LSB)
(LSB)
(ppm/
°C)
LEAD
DESIGNATOR
RANGE
MARKING
DAC7564A
±1
±0.5
25
TSSOP-16
PW
–40°C to +105°C
DAC7564
DAC7564C
±1
±0.5
5
TSSOP-16
PW
–40°C to +105°C
DAC7564
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
DAC7564
UNIT
AVDD to GND
–0.3 to +6
V
Digital input voltage to GND
–0.3 to +VDD + 0.3
V
VOUT to GND
–0.3 to +VDD + 0.3
V
VREF to GND
–0.3 to +VDD + 0.3
V
Operating temperature range
–40 to +125
°C
Storage temperature range
–65 to +150
°C
Junction temperature range (TJ max)
+150
°C
Power dissipation
(TJ max – TA)/θJA
W
Thermal impedance,
θJA
+118
°C/W
Thermal impedance,
θJC
+29
°C/W
Human body model (HBM)
4000
V
ESD rating
Charged device model (CDM)
1500
V
(1)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
2
Copyright
© 2008–2011, Texas Instruments Incorporated


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