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SI6966DQ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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SI6966DQ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page April 2001 2001 Fairchild Semiconductor Corporation SI6966DQ Rev A(W) SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Load switch • Motor drive • DC/DC conversion • Power management Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ V GS = 4.5 V RDS(ON) = 0.035 Ω @ V GS = 2.5 V • Extended V GSS range ( ±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D1 S1 S1 G1 D2 S2 S2 G2 TSSOP-8 Pin 1 8 7 6 5 1 2 3 4 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 5.5 A – Pulsed 30 PD Power Dissipation (Note 1a) 1.0 W (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6966 SI6966DQ 13’’ 12mm 3000 units |
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