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SI6410DQ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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SI6410DQ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 2001 2001 Fairchild Semiconductor Corporation Si6410DQ Rev B(W) Si6410DQ 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). Applications • Battery protection • DC/DC conversion • Power management • Load switch Features • 7.8 A, 30 V RDS(ON) = 14 m Ω @ VGS = 10 V RDS(ON) = 21 m Ω @ VGS = 4.5 V • Extended VGSS range (±20V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S G D S S D TSSOP-8 Pin 1 4 3 2 1 5 6 7 8 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1) 7.8 A – Pulsed 20 PD Power Dissipation (Note 1a) 1.4 W (Note 1b) 1.1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6410 Si6410DQ 13’’ 16mm 3000 units |
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